Next-Generation of Non Volatile RAM
NEC has announced that it has succeeded in developing a new type of memory that preserves the SRAM compatibility. The new discovery has been named MRAM, which stands for Magnetoresistive Random Access Memory, and is alleged to run at a speed of 250 MHz, the fastest MRAM speed in the world. The design incorporates a memory cell with two transistors, one magnetic tunnel junction, and a newly-developed circuit scheme that allows an operating speed of 250 MHz, which is almost double than the nowadays’ MRAM speeds. Same speeds can only be achieved by the newer, LSI-embedded SRAM memory.MRAM are expected to generate new value and applications for future electronic devices thanks to their nonvolatility, unlimited write endurance, high speed operation, and ability to cut memory power dissipation in half.
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